PART |
Description |
Maker |
HY6116 HY6116-15 |
2048 x 8 Bit CMOS Static RAM x8 SRAM
|
Hynix Semiconductor
|
M5L8155P |
2048-Bit Static Ram
|
Mitsubishi
|
M38259EFDFP M38258E4-FP M38258E4-FS M38258E4-GP M3 |
3825 Series Microcontrollers: On-Chip Segment LCDDrivers with A-D Converter RAM size: 1536 bytes; single-chip 8-bit CMOS microcomputer RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer RAM size: 256 bytes; single-chip 8-bit CMOS microcomputer RAM size: 384 bytes; single-chip 8-bit CMOS microcomputer RAM size: 512 bytes; single-chip 8-bit CMOS microcomputer RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer RAM size: 640 bytes; single-chip 8-bit CMOS microcomputer RAM size: 768 bytes; single-chip 8-bit CMOS microcomputer RAM size: 896 bytes; single-chip 8-bit CMOS microcomputer RAM size: 2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch From old datasheet system 524288-BIT CMOS STATIC RAM 524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
UPD4016 |
2048 x 8 Bit Static NMOS RAM
|
NEC
|
UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
IDT71V428YS10YYYG IDT71V428YS10YYYGI IDT71V428S10Y |
3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) 3.3V 1M x 4 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Techn... IDT[Integrated Device Technology]
|
M5M5V216ATP M5M5V216ART D98013_A M5M5V216ATP-55LW |
2097152-bit CMOS static RAM From old datasheet system 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
UPD4464 UPD4464C-12 UPD4464C-12L UPD4464C-15 UPD44 |
8192 x 8 Bit Static CMOS RAM 8,192 X 8 - BIT STATIC CMOS RAM
|
NEC
|
TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM (TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|